Progress in heterogeneously integrated silicon-InP laser diodes for on-chip all-optical networks and signal processing
نویسندگان
چکیده
We describe progress in the design and fabrication of laser diodes based on InPmembranes heterogeneously integrated onto silicon-on-insulator wire waveguides. Applications in optical interconnect and all-optical logic are discussed. © 2011 Optical society of America OCIS-codes: (060.6719) Packet switching; (250.3750) Optical logic devices; (250.4745) Optical processing devices
منابع مشابه
A Review of Optical Routers in Photonic Networks-on-Chip: A Literature Survey
Due to the increasing growth of processing cores in complex computational systems, all the connection converted bottleneck for all systems. With the protection of progressing and constructing complex photonic connection on chip, optical data transmission is the best choice for replacing with electrical interconnection for the reason of gathering connection with a high bandwidth and insertion lo...
متن کاملSemiconductor optical amplifiers at 2.0-μm wavelength heterogeneously integrated on silicon
We report the first semiconductor optical amplifiers at 2.0-μm wavelength, heterogeneously integrated by bonding an InP-based active region to silicon. On-chip gain larger than 10 dB is observed at 20°C over a 40-nm bandwidth. OCIS codes: (130.3120) Integrated optics devices, (230.4480) Optical amplifiers.
متن کاملA Comparative Study on the Effect of Optical Illumination on Si1-xGex and Si based DDR IMPATT Diodes at W-Band
The effect of optical illumination on DC and dynamic performance of Si1-xGex based double drift region (DDR) (p+pnn+) IMPATT diode operating at W-Band is investigated and compared with its Silicon counterpart. Top Mounted (TM) and Flip Chip (FC) structures are chosen and the composition of photocurrent is altered by shining light on the p+ side and n+ side of the device through optical windows....
متن کاملDesign of a new asymmetric waveguide in InP-Based multi-quantum well laser
Today, electron leakage in InP-based separate confinement laser diode has a serious effect on device performance. Control of electron leakage current is the aim of many studies in semiconductor laser industry. In this study, for the first time, a new asymmetric waveguide structure with n-interlayer for a 1.325 μm InP-based laser diode with InGaAsP multi-quantum well is proposed and theoreticall...
متن کاملThe advantage of using a diode laser instead of a Q-switched laser in photoacoustic imaging of tissues
Photoacoustic (PA) imaging of biological tissues using laser diodes instead of conventional Q switched pulsed systems provides an attractive alternative for biomedical applications. However, the relatively low energy of laser diodes operating in the pulsed regime, results in generation of very weak acoustic waves, and low signal-to-noise ratio (SNR) of the detected signals. This problem can be ...
متن کامل